CVD characteristic: Temperature of form sediment accumulating is low, filmy component accuses easily, film is deep with form sediment accumulating time becomes direct ratio, uniformity, repeatability is good, step enclothes a gender admirable.
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- Carbon of nitrogen of saline bath
- Uniformity of film of vacuum plate
- Craft of coating of NiCrAlY of dep
- Large area magnetism accuses to sp
- The good point after vacuum plated
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- Form sediment of chemical gas phas
- The application of technology of v
- Magnetism accuses to splash fire c
- Rate of unusual Hall resistor conc
Random Recommendation
- Form sediment of chemical gas phas
- The application of technology of v
- Uniformity of film of vacuum plate
- The good point after vacuum plated
- Carbon of nitrogen of saline bath
- Large area magnetism accuses to sp
- Rate of unusual Hall resistor conc
- Magnetism accuses to splash fire c
- Craft of coating of NiCrAlY of dep
- Vacuum food
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Form sediment of chemical gas phase is accumulated [CVD(Chemical Vapor Depositio
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Form sediment of chemical gas phase is accumulated [CVD(Chemical Vapor Deposition)] , show a steam that contains the gaseous reaction lotion that makes filmy element or agent of liquid state reaction and reaction place need other gas to introduce reative cell, chemical reaction happens to build filmy course in underlay surface. Very much in VLSI film is to use CVD method preparation.
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